Dielectric behavior of Cu–GeO2 cermet thin films

Capacitance and dielectric loss measurements were carried out using an Al/Cu–GeO2/Al sandwich structure for 0 to 10 vol% Cu films, 120– 400 nm thick, deposited at 0.4–1.5 nm/s in the frequency and temperature range 1–106 Hz and 90–573 K, respectively. The variation of capacitance and dielectric loss with frequency and temperature follows the Goswami and Goswami model. Capacitance decreases slowly with increasing thickness and also varies with the change in deposition rate of the cermet film.