Title of article :
Phase equilibria in the pseudo-binary In2O3–SnO2 system
Author/Authors :
WILLIAM J. HEWARD، نويسنده , , Douglas J. Swenson، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2007
Abstract :
The pseudo-binary In2O3–SnO2 phase diagram
has been determined in the range of 1000–1650 C using
electron probe microanalysis (EPMA) and x-ray diffraction
(XRD) analysis of solid-state sintered samples. The solubility
of SnO2 in In2O3 was found to range from 1.3 mol%
at 1000 C to a maximum of 13.1 mol% at 1650 C,
indicating that commercial SnO2-doped In2O3 thin films
are thermodynamically metastable. In2O3 was found to
have negligible solubility in SnO2 throughout the temperatures
examined. In this study two intermediate compounds,
In4Sn3O12 and In2SnO5, were found. Each phase
was found to be stable only at high temperatures, decomposing
eutectoidally at 1325 and 1575 C, respectively.
This is believed to be the first report of the high temperature
phase In2SnO5, which is attractive for future research
as a transparent conducting oxide.
Journal title :
Journal of Materials Science
Journal title :
Journal of Materials Science