Title of article
The effect of annealing time on r.f. magnetron sputtered La3Ga5SiO14 films
Author/Authors
Feng-Wei Wang، نويسنده , , Yi Hu، نويسنده , , Hur-Lon Lin، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2007
Pages
4
From page
7307
To page
7310
Abstract
La3Ga5SiO14 (LGS) thin films have been grown
by r.f. sputtering at 600 C on (200)-textured MgO buffer
layers deposited also by r.f. sputtering on Si substrates. The
evolution of crystalline phases in the thin films as a function
of time was examined by X-ray diffraction and scanning
electron microscopy before and after annealing in air
for various times. The morphology of the crystals formed
and their formation mechanism were discussed
Journal title
Journal of Materials Science
Serial Year
2007
Journal title
Journal of Materials Science
Record number
833410
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