Synthesis and temperature dependent photoluminescence of Zn1–xMgxO films grown by ultrasonic spray pyrolysis

Zn1–xMgxO films were deposited on single crystal Si (100) substrates using ultrasonic spray pyrolysis under ambient atmosphere. A strong ultraviolet near-bandedge (NBE) emission was observed in the room temperature photoluminescence (PL) measurement for all the as-grown Zn1–xMgxO films, while the deep-level emission was almost undetectable, suggesting that the obtained Zn1–xMgxO-based films are well close to stoichiometry and of optically high quality. A distinct blue-shift of NBE emission peak from 386 nm to 358 nm was observed as the Mg concentration increases from 0% to 25 %. The photoluminescence spectra as a function of temperature were also investigated to examine the emission mechanism of Zn1–xMgxO films.