Title of article :
Multiscale model of electronic behavior and localization
in stretched dry DNA
Author/Authors :
Ryan L. Barnett، نويسنده , , Paul Maragakis، نويسنده , , Ari Turner، نويسنده , ,
Maria Fyta، نويسنده , , Efthimios Kaxiras، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2007
Abstract :
When the DNA double helix is subjected to
external forces it can stretch elastically to elongations
reaching 100% of its natural length. These distortions,
imposed at the mesoscopic or macroscopic scales, have a
dramatic effect on electronic properties at the atomic scale
and on electrical transport along DNA. Accordingly, a
multiscale approach is necessary to capture the electronic
behavior of the stretched DNA helix. To construct such a
model, we begin with accurate density-functional-theory
calculations for electronic states in DNA bases and base
pairs in various relative configurations encountered in the
equilibrium and stretched forms. These results are complemented
by semi-empirical quantum mechanical calculations
for the states of a small size [18 base pair
poly(CG)–poly(CG)] dry, neutral DNA sequence, using
previously published models for stretched DNA. The calculated
electronic states are then used to parametrize an
effective tight-binding model that can describe electron
hopping in the presence of environmental effects, such as
the presence of stray water molecules on the backbone or
structural features of the substrate. These effects introduce
disorder in the model hamiltonian which leads to electron
localization. The localization length is smaller by several
orders of magnitude in stretched DNA relative to that in the
unstretched structure.
Journal title :
Journal of Materials Science
Journal title :
Journal of Materials Science