Title of article
Far infrared properties of PbTe doped with Bismuth
Author/Authors
P. M. Nikolic، نويسنده , , K. M. Paraskevopoulos ، نويسنده , , S. S. Vujatovic، نويسنده , , A. Bojicic، نويسنده , , T. T. Zorba، نويسنده , , M. V. Nikolic، نويسنده , , B. Stamenovic، نويسنده , , T. Ivetic، نويسنده , , V. Blagojevic، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
5
From page
5516
To page
5520
Abstract
Far infrared reflectivity spectra of single crystal
PbTe doped with Bi were measured and numerically analyzed
using a fitting procedure based on a modified
plasmon–phonon interaction model with two additional
oscillators at about 140 and 219 cm-1 which represents
local Bi impurity modes. The position of observed plasma
minimum and the values of the calculated parameters were
compared with the literature data for pure single crystal
PbTe which shows that bismuth improved the basic properties
of the host crystal a lot.
Journal title
Journal of Materials Science
Serial Year
2008
Journal title
Journal of Materials Science
Record number
834553
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