Abstract :
The ac parameters (cell capacitance and cell resistance) of Silicon (Si) and Gallium Arsenide (GaAs/Ge) solar cells
are measured at different temperatures using time domain technique. The cell capacitance is calculated from the Open
circuit voltage decay (OCVD) and the cell resistance from solar cell I–V characteristics measured under dark condition.
It is observed that the solar cell capacitance increases whereas the cell resistance decreases with increase in temperature.
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