Abstract :
A contactless, all-optical and non-destructive technique for simultaneous measurement of minority carrier recombination
lifetime and surface recombination velocity, at low injection level, in multi-crystalline silicon samples is presented.
Being contactless and non-destructive with respect to the surface to be analyzed, the method does not need
any surface treatment to be applied and therefore is suitable for routine lifetime characterization in solar cell fabrication
processes.
2004 Elsevier Ltd. All rights reserved.
