Abstract :
R.F. sputter deposition of Sb doped CdTe thin films was carried out with targets containing different amounts of
antimony (CT: 0, 2.5, 10 and 20 at.%). The substrates were kept at different temperatures (Ts) of 200, 275, 350 and
450 C. Three different argon pressure values: 2.5, 5 and 15 mTorr were used. The lowest dark resistivity (q) at room
temperature (RT) was 9.0 · 105 X cm, which is one of the lowest values reported in the literature for Sb doped CdTe.
Highly transparent ( 90%) and conductive (q = 3.7 · 10 4 X cm) F doped CdO (n-type) thin films, prepared at room
temperature by the sol–gel method, were employed as window and top-contact. The configuration of the fabricated
solar cell was (Au–Cu)/p-CdTe/n-CdO/glass. Open-circuit voltage (Voc) and short-circuit current density (Jsc) at room
temperature have the highest values for high Ts, low Pg and CT = 10 at.%. Despite the fact that Voc and Jsc are lower
than those reported in the literature, we think this work is useful as a basis for the search of more competitive CdTe/
CdO based PV devices.
2005 Elsevier Ltd. All rights reserved.
