Abstract :
When devices are fabricated on thin foil substrates, any mismatch strain in the device structure makes the work piece
curve. Any change of the radius of curvature produces a change in the size of the work piece, and thereby misalignment
between individual device layers. To achieve tight tolerances, changes of curvature must be minimized throughout the fabrication
process.
Amorphous silicon thin-film transistors and solar cells respond differently to externally applied tensile strain. The elastic
deformation of the transistor is correlated with small increase in the electron mobility. When the tensile strain reaches
0.34%, crack formation starts and causes an abrupt change in the transistor performance. The performance of solar cells,
on the other hand, does not change for tensile strain up to 0.7%. At larger strain the short-circuit current, open-circuit
voltage, fill factor, and the efficiency gradually decrease.
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