Abstract :
The influence of various parameters such as buffer intrinsic layers, back-surface fields, densities of interface defects (Dit), the resistivity
of p-type silicon substrates (q) and then work function of transparent conductive oxide (/TCO) on heterojunction with intrinsic thin-layer
(HIT) solar cell performance was investigated using software simulation. Automat for the simulation of heterostructures (AFORS-HET)
software was used for that purpose. Our results indicate that band bending, which is determined by the band offsets at the buffer intrinsic/
c-Si and/or the c-Si/back-surface field heterointerface, could be critical to solar cell performance. The effect of band bending on solar cell
performance and the dependence of cell performance on q and /TCO were investigated in detail. Eventually, suggestive design parameters
for HIT solar cell fabrication are proposed.
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