Abstract :
This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique.
Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing
Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl4 5H2O. Interestingly, it
was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such
as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative
photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, ‘in- situ doping’ resulted in widening of optical
band gap through oxygen incorporation; also it gave highly photosensitive films.
2010 Elsevier Ltd. All rights reserved
