Abstract :
Microcrystalline silicon thin film is deposited under different conditions by plasma enhanced chemical vapor deposition. The light
stability with different crystallinity and grain size is studied, and the growth mechanism is analyzed using the scaling behavior of roughening
surface evolution. Degradation of photoconductivity mainly depends on crystallinity and grain size, but fundamentally, on the
growth mechanism. Materials with high crystallinity and large grain size are more stable under light soaking. With the increasing of
deposition pressure and input power, growth process transfers to zero diffusion limit growth mechanism, and films deposited present
less grain size and poor light stability.
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