Abstract :
Amorphous In–Zn–O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique
to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150 C with various laser power (250–500 mJ/pulse)
exhibit low resistivity (2–3 10 3 X cm) and high transparency ( 80%) in the visible wavelength range. The highest conversion efficiency
of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100 mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, shortcircuit
current density and fill factor of the best device are 0.24 V, 28.4 mA/cm2 and 33.6%, respectively.
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