Abstract :
The techniques of linear sweep voltammetry (LSV) and impedance spectroscopy (IS) are combined to study the detailed temperature
and voltage dependencies of a range of performance-indicator parameters of a mono-crystalline n+–p Si solar cell. The complex nonlinear
least square fitting procedure is employed for quantitative evaluation of the IS data. The underlying mechanisms of the observed temperature/
voltage sensitive characteristics of the cell are examined using a collection of currently available theoretical models. The individual
roles of minority carrier diffusion and defect-induced charge recombination are manifested in the voltage and temperature
dependent signatures of the measured cell parameters. These parameters include the transition layer capacitance and built-in potential
of the n+–p interface, the acceptor concentration in the base, the series, shunt and recombination resistances, and the effective diode ideality
factor.
2011 Elsevier Ltd. All rights reserved.
