Abstract :
The growth of grain size of CuInGaSe2 and the Ga distribution in the thin film CuInGaSe2 solar cell devices fabricated using a sputtering
CuInGa ternary target have been studied. It was observed, adding a thin CuGa layer on top of the surface of CuInGa ternary
precursor would increase the Ga concentration, and thus the energy gap in the space-charge region after selenization. As a result, the
open circuit voltage (Voc) of the device was increased by 15%. The SEM and XRD studies further show that the addition of a CuGa
layer enhanced the growth of grain size of CuInGaSe2 during selenization and increased the conversion efficiency of the solar cell devices
by 27% (from 6.3% to 8%).
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