Abstract :
Pure and Zn, Sb, Ni-doped CuInS2 films were prepared by chemical bath deposition method. Structural, morphological, optical, and
photoelectrochemical properties of the as-grown films were investigated. X-ray diffraction analysis revealed that films consisted of the
tetragonal CuInS2 phase. The energy band gaps and carrier densities of these samples were in the ranges of 1.48–1.54 eV and
2.38 1018–9.38 1019, respectively. The maximum photocurrent density of samples with a potential of 1.0 V vs. a Pt electrode
was found to be 8.58 mA/cm2 with the largest hydrogen production capability of 33.26 lmol/cm2 under illumination using a 300 W
Xe lamp system.
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