STUDY OF ELECTRICAL PROPERTIES OF SCHOTTKY DIODES IN DIFFERENT TREATMENTS

This paper assesses the electrical properties of Schottky Diodes (SD) in different treatments and gamma- radiation-damaged quanta performance technology with SD using amorphous metal alloy (alphaNiTi-nSi) sample of solar cells. It is shown that annealing kind of “cures wounds” is introduced by the mechanical load and improves the parameters of the damaged SD. At the same time it studies the experimental results demonstrating of the ability to recover and control the parameters of silicon solar elements (SE) with ultrasonic impact treatment (UIT), which is probably due to rearrangement and athermal annealing of radiation defects, formed by gamma-rays.