Integrated 1.3-(mu)m DFB laser electroabsorption modulator based on identical MQW double-stack active layer with 25-GHz modulation performance

1.31-)mu(m electroabsorption modulators monolithically integrated with a DFB laser diode have been realized using an identical InGaAsP-InP multiple quantum-well-layer structure composed of two different QW types. Low laser threshold currents <13 mA and high 3-dBe cutoff frequency up to ~25 GHz have been measured.