Author/Authors :
Li، Ning نويسنده , , Li، Xiaowei نويسنده , , Zheng، Xiaoguang نويسنده , , S.، Demiguel, نويسنده , , J.C.، Campbell, نويسنده , , D.A.، Tulchinsky, نويسنده , , K.J.، Williams, نويسنده ,
Abstract :
A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power is achieved. Small signal compression current of 110 and 57 mA is measured at radio-frequency bandwidths of 1 and 10 GHz, respectively. This continuous photocurrent is believed to be the highest reported value for a p-i-n InGaAs PD at these bandwidths.
