Title of article
InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems
Author/Authors
H.، Yoshida, نويسنده , , T.، Simoyama, نويسنده , , H.، Ishikawa, نويسنده , , Kasai، Jun-ichi نويسنده , , T.، Mozume, نويسنده , , A.V.، Gopal, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1362
From page
1363
To page
0
Abstract
We report a novel intersubband transition all-optical switch with low switching energy using InGaAs-AlAs-AlAsSb coupled double quantum wells (C-DQWs) with AlAs spacer layers. Very low saturation energy density of 34 fJ (mu)m/sup 2/ was observed for bulk transmittance with wavelength of 1.62 (mu)m. Using a waveguide, whose core is 93 periods of the C-DQWs, an all optical switch with a low switching energy of 10 pJ for 10-dB extinction ratio was realized.
Keywords
E-LEARNING , Perceived credibility , Technology acceptance model (TAM)
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
Serial Year
2003
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
Record number
85551
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