Author/Authors :
C.، Tsai, نويسنده , , T.، Nguyen, نويسنده , , C.، Shen, نويسنده , , X.، Wu, نويسنده , , T.، Pinnington, نويسنده , , J.، Krogen, نويسنده , , B.، Witzigmann, نويسنده , , L.، Cote, نويسنده , , M.، Geva, نويسنده , , D.، Huynh, نويسنده , , A.، Konkar, نويسنده , , P.C.، Chen, نويسنده ,
Abstract :
A novel vertical-cavity surface-emitting laser structure has been fabricated with low loss and high reflectivity aAl/sub 2/O/sub 3//a-Si distributed Bragg reflectors. The active region consists of AlGaInAs multiple quantum wells and a tunnel junction and has been grown by a single-step metal-organic chemical vapor deposition. Laser emission at 1.3 (mu)m was achieved under continuous-wave operation at room temperature.
