Bias dependence of high-frequency noise in heterojunction bipolar transistors

Hawkinsʹ isothermal model developed to study noise in bipolar junction transistors (BJTs) is modified to investigate bias-dependent noise in heterojunction bipolar transistors (HBTs) by incorporating thermal effects. It is shown that the inclusion of thermal effects into the high-frequency noise model of HBTs is necessary as the temperature of the device may become very different from the ambient temperature, especially at high bias current. Calculation of the noise figure by including the thermal effect shows that the isothermal calculation may underestimate the noise figure at high bias current. It is observed that noise at low bias is ideality factor n dependent whereas high bias noise is insensitive to the variation of n. Moreover, the common base current gain plays a major role in the calculation of the minimum noise figure. The excellent fit obtained between the theoretical calculation and the measured data are attributed to the inclusion of the bias-dependent junction heating as well as C/sub De/ and C/sub bc/ into the present calculation.