Title of article :
4H-silicon carbide Schottky barrier diodes for microwave applications
Author/Authors :
H.، Zirath, نويسنده , , J.، Eriksson, نويسنده , , N.، Rorsman, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
In this paper, physical models for vertical 4H-silicon carbide (4H-SiC) Schottky diodes are used to develop a design method, where a maximum cutoff frequency for a given punch-through is achieved. The models presented are also used to extract microwave simulator computer-aided design (CAD) models for the devices. A device process was developed and Schottky diodes were fabricated in-house. Characterization of the devices was performed and compared to the theoretical models with good agreement. A demonstrator singly balanced diode mixer was simulated using the developed models. The mixer was fabricated using the in-house developed diodes, and measurements on the mixer show good agreement with the CAD simulations. A conversion loss of 5.2 dB was achieved at 850 MHz, and an excellent IIP/sub 3/ of 31 dBm at 850-MHz RF was measured, at 30-dBm P/sub LO/. These results verify the enhanced properties of the SiC Schottky diode compared to other nonwide bandgap diodes.
Keywords :
Hydrotalcite-like compound , Magnesium-aluminum oxide , removal , simultaneous , Buffering action , CaCl2 solution
Journal title :
IEEE Transactions on Microwave Theory and Techniques
Journal title :
IEEE Transactions on Microwave Theory and Techniques