Title of article
On-wafer noise-parameter measurements at W-band
Author/Authors
M.، Kantanen, نويسنده , , M.، Lahdes, نويسنده , , T.، Vaha-Heikkila, نويسنده , , J.، Tuovinen, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1620
From page
1621
To page
0
Abstract
A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electronmobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.
Keywords
Laminated waveguide , low-temperature co-fired ceramic (LTCC) , millimeter wave , rectangular waveguide (RWG) , waveguide transition
Journal title
IEEE Transactions on Microwave Theory and Techniques
Serial Year
2003
Journal title
IEEE Transactions on Microwave Theory and Techniques
Record number
85857
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