Author/Authors :
W.، Bachtold, نويسنده , , D.M.M.-P.، Schreurs, نويسنده , , A.، Orzati, نويسنده , , L.، Pergola, نويسنده , , H.، Benedickter, نويسنده , , F.، Robin, نويسنده , , O.J.، Homan, نويسنده ,
Abstract :
We developed an efficient method to extract a large-signal lookup table model for InP high electron-mobility transistors that takes impact ionization into account. By measuring the device on a logarithmic frequency scale, we obtain high resolution at lower frequencies to accurately characterize impact ionization, and a sufficient number of data points at millimeter-wave frequencies to extract the nonquasi-static parameters. Model validation through linear and nonlinear device measurements and its application to monolithic-microwave integrated-circuit design are presented.
Keywords :
low-temperature co-fired ceramic (LTCC) , millimeter wave , rectangular waveguide (RWG) , Laminated waveguide , waveguide transition
