Title of article
Linearity characteristics of microwave-power GaN HEMTs
Author/Authors
W.، Nagy, نويسنده , , J.، Brown, نويسنده , , R.، Borges, نويسنده , , S.، Singhal, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-65
From page
66
To page
0
Abstract
The RF linearity of a 9-mm 10-W GaN high electron-mobility transistor (HEMT) grown on a 100-mm silicon substrate is presented. The quantitative results display promising device linearity as measured by intermodulation distortion and adjacent channel power ratio at 2.0 GHz for various power backoff levels and different quiescent points. These initial results demonstrate that larger periphery GaN HEMTs grown on silicon provide device linearity commensurate with current semiconductor device technology used for power-amplifier applications.
Keywords
waveguide transition , rectangular waveguide (RWG) , low-temperature co-fired ceramic (LTCC) , Laminated waveguide , millimeter wave
Journal title
IEEE Transactions on Microwave Theory and Techniques
Serial Year
2003
Journal title
IEEE Transactions on Microwave Theory and Techniques
Record number
86017
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