Title of article
Total ionizing dose effects in MOS oxides and devices
Author/Authors
T.R.، Oldham, نويسنده , , F.B.، McLean, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-482
From page
483
To page
0
Abstract
This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.
Keywords
Determination , Continuous , Biodegradable dissolved organic carbon , Cell immobilization , bioreactor
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86178
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