Title of article
Review of displacement damage effects in silicon devices
Author/Authors
P.W.، Marshall, نويسنده , , J.R.، Srour, نويسنده , , C.J.، Marshall, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-652
From page
653
To page
0
Abstract
This paper provides a historical review of the literature on the effects of radiationinduced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.
Keywords
Determination , Continuous , Biodegradable dissolved organic carbon , Cell immobilization , bioreactor
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86188
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