Title of article :
Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET
Author/Authors :
P.، Gouker, نويسنده , , J.، Burns, نويسنده , , P.، Wyatt, نويسنده , , K.، Warner, نويسنده , , E.، Austin, نويسنده , , R.، Milanowski, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
We studied the total dose radiation effects from an X-ray source in submicron fully depleted n-channel field effect transistors on conventional SOI wafers, after substrate removal, and after buried oxide thinning. A significant enhancement in radiation tolerance is observed both after substrate removal and after subsequent buried oxide thinning.
Keywords :
Determination , Continuous , Biodegradable dissolved organic carbon , Cell immobilization , bioreactor
Journal title :
IEEE Transactions on Nuclear Science
Journal title :
IEEE Transactions on Nuclear Science
