Title of article
Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET
Author/Authors
P.، Gouker, نويسنده , , J.، Burns, نويسنده , , P.، Wyatt, نويسنده , , K.، Warner, نويسنده , , E.، Austin, نويسنده , , R.، Milanowski, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1775
From page
1776
To page
0
Abstract
We studied the total dose radiation effects from an X-ray source in submicron fully depleted n-channel field effect transistors on conventional SOI wafers, after substrate removal, and after buried oxide thinning. A significant enhancement in radiation tolerance is observed both after substrate removal and after subsequent buried oxide thinning.
Keywords
Determination , Continuous , Biodegradable dissolved organic carbon , Cell immobilization , bioreactor
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86265
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