Title of article
Bulk damage caused by single protons in SDRAMs
Author/Authors
H.، Shindou, نويسنده , , S.، Kuboyama, نويسنده , , N.، Ikeda, نويسنده , , T.، Hirao, نويسنده , , S.، Matsuda, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1838
From page
1839
To page
0
Abstract
A new failure mode that is attributable to the bulk damage caused by single protons has been reported in 256-Mbit SDRAMs. The refresh rate required to retain memorized data was measured as a typical parameter to detect the effect. We performed the proton irradiation test and discussed results regarding the influence of this failure.
Keywords
Determination , Biodegradable dissolved organic carbon , Cell immobilization , bioreactor , Continuous
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86275
Link To Document