Title of article
Probing proton damage in SOI CMOS technology by using lateral bipolar action
Author/Authors
Li، Ying-Feng نويسنده , , Niu، Guofu نويسنده , , J.D.، Cressler, نويسنده , , R.A.، Reed, نويسنده , , P.W.، Marshall, نويسنده , , J.، Patel, نويسنده , , M.، Liu, نويسنده , , M.M.، Mojarradi, نويسنده , , B.J.، Blalock, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1884
From page
1885
To page
0
Abstract
We investigate proton damage in SOI CMOS devices on UNIBOND using a variety of lateral bipolar operational modes. We show that the impact of interface states and oxide charge can be more clearly observed using lateral bipolar action than by using normal FET operational characteristics. We also investigate the radiation-induced interface states at the Si/buried oxide interface and oxide charges in the buried oxide of this SOI CMOS technology using the DCIV method.
Keywords
Cell immobilization , Biodegradable dissolved organic carbon , Determination , Continuous , bioreactor
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86282
Link To Document