Author/Authors :
S.، Mitra, نويسنده , , H.L.، Hughes, نويسنده , , S.T.، Liu, نويسنده , , W.W.، Heikkila, نويسنده , , K.W.، Golke, نويسنده , , D.، Anthony, نويسنده , , A.، Hurst, نويسنده , , G.، Kirchner, نويسنده , , W.C.، Jenkins, نويسنده , , D.E.، Ioannou, نويسنده ,
Abstract :
Heavy ion and proton single event upsets of 4 M SOI SRAM with a hardened delay element in each memory cell were evaluated. These 4 M SRAM were fabricated in UNIBOND substrates using a radiation hardened partially depleted silicon-on-insulator CMOS technology. Limiting heavy ion upset cross-section of 1.2*10^10 cm/sup 2//bit has been achieved. Limiting proton upset cross-section of 1.1*10^-17 cm/sup 2//bit has also been obtained.
Keywords :
Determination , Biodegradable dissolved organic carbon , Continuous , bioreactor , Cell immobilization
