Title of article :
Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs by device simulation
Author/Authors :
P.E.، Dodd, نويسنده , , F.W.، Sexton, نويسنده , , K.، Castellani-Coulie, نويسنده , , B.، Sagnes, نويسنده , , F.، Saigne, نويسنده , , J.-M.، Palau, نويسنده , , M.-C.، Calvet, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-2238
From page :
2239
To page :
0
Abstract :
The off-NMOS and off-PMOS transistor single-event upset (SEU) sensitivities are studied in a 0.6-(mu)m SRAM. In some cases, the off-PMOS sensitivity is shown to be similar to the off-NMOS one. This could affect SEU rate calculations.
Keywords :
Determination , bioreactor , Cell immobilization , Continuous , Biodegradable dissolved organic carbon
Journal title :
IEEE Transactions on Nuclear Science
Serial Year :
2003
Journal title :
IEEE Transactions on Nuclear Science
Record number :
86332
Link To Document :
بازگشت