Title of article
Total dose hardness assurance testing using laboratory radiation sources
Author/Authors
J.R.، Schwank, نويسنده , , V.، Ferlet-Cavrois, نويسنده , , M.R.، Shaneyfelt, نويسنده , , P.، Paillet, نويسنده , , O.، Flament, نويسنده , , E.W.، Blackmore, نويسنده , , R.L.، Jones, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-230
From page
231
To page
0
Abstract
NMOS transistors were irradiated using X-ray, Co-60 gamma, electron, and proton radiation sources. The charge yield was estimated for protons of different energies and electrons, and compared with values obtained for X-ray and Co-60 irradiations.
Keywords
Determination , Biodegradable dissolved organic carbon , Continuous , Cell immobilization , bioreactor
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86344
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