Non-equilibrium thermodynamic description of junctions in semiconductor devices

The methods of non-equilibrium thermodynamics of systems with an interface have been applied to the study of transport processes in semiconductor junctions. A complete phenomenological model for drift—diffusion processes in a junction has been derived, which includes, from first principles, both surface equations and boundary conditions, together with the usual drift-diffusion equations for the bulks. In this way, a self-consistent characterization of the whole system, bulks and interface, has been obtained in a common framework. The completeness of the model has been shown and a simple application to metal—semiconductor junctions developed.