Relaxation-time approximations to the Boltzmann equation for electron transport in bulk silicon

Relaxation-time approximations of the collisional operator of the Boltzmann transport equation are used for simulating carrier transport in silicon semiconductors. Solutions of these kinetic models are obtained through the use of exact-integral representations in the stationary and homogeneous regime. Some properties of these solutions have been discussed and their validity have been assessed by Monte Carlo simulations in bulk silicon.