Title of article :
High-gain quantum-dot semiconductor optical amplifier for 1300 nm
Author/Authors :
A.L.، Gray, نويسنده , , T.C.، Newell, نويسنده , , L.F.، Lester, نويسنده , , Z.، Bakonyi, نويسنده , , Su، Hui نويسنده , , G.، Onishchukov, نويسنده , , A.، Tunnermann, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-1408
From page :
1409
To page :
0
Abstract :
Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs "dots-in-a-well" (DWELL) gain region having an aggregate dot density of approximately 8*10/sup 11/ cm/sup -2/, an optical gain of 18 dB at 1300 nm has been obtained in a 2.4-mm-long amplifier at 100-mA pump current. The optical bandwidth is 50 nm, and the output saturation power is 9 dBm. The dependence of the amplifier parameters on the pump current and the gain recovery dynamics has also been studied.
Keywords :
multiple-wavelength emission , Second-harmonic generation , nonlinear optics , mid-infrared , Quantum wells , quantum cascade laser , Intersubband transitions
Journal title :
IEEE JOURNAL OF QUANTUM ELECTRONICS
Serial Year :
2003
Journal title :
IEEE JOURNAL OF QUANTUM ELECTRONICS
Record number :
87250
Link To Document :
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