Title of article
Designand Simulationof S-Band Low Noise Amplifier
Author/Authors
Abdipour، Mahmoud نويسنده Department of Electrical Engineering Arak Branch, Islamic Azad university Arak, Iran , , Gholami، Sasan نويسنده Department of Electrical Engineering, Shirvan Chardavol Center, Islamic Azad university, Ilam, Iran ,
Issue Information
روزنامه با شماره پیاپی 0 سال 2013
Pages
4
From page
1354
To page
1357
Abstract
In this paper a s-band low noise amplifier is presented. The amplifier is centered at 3
GHz with a noise figure(NF) less than 0.85dB.TheGa- As HEMT’s offer low noise figure compared to
MESFET’s and silicon FET’s.so we used this type of transistors to obtain a overall noise figure less
than0.85 dB .This amplifier is designed using ADS software.
Journal title
Technical Journal of Engineering and Applied Sciences (TJEAS)
Serial Year
2013
Journal title
Technical Journal of Engineering and Applied Sciences (TJEAS)
Record number
888845
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