Author/Authors :
Abdipour، Mahmoud نويسنده Department of Electrical Engineering Arak Branch, Islamic Azad university Arak, Iran , , Gholami، Sasan نويسنده Department of Electrical Engineering, Shirvan Chardavol Center, Islamic Azad university, Ilam, Iran ,
Abstract :
In this paper a s-band low noise amplifier is presented. The amplifier is centered at 3
GHz with a noise figure(NF) less than 0.85dB.TheGa- As HEMT’s offer low noise figure compared to
MESFET’s and silicon FET’s.so we used this type of transistors to obtain a overall noise figure less
than0.85 dB .This amplifier is designed using ADS software.
