Numerical discretization of energy-transport model for semiconductors using high-order compact schemes Original Research Article

This paper deals with numerical discretization of energy-transport model for nondegenerate semiconductors With a parabolic structure. The scheme is based on high-order computations using compact stencil. Numerical simulations of a ballistic diode in 1D are performed for different energy relaxation time and are compared with the results obtained by a drift-diffusion model.