Title of article
The relaxation limits to the bipolar hydrodynamic model for semiconductors Original Research Article
Author/Authors
Ling Hsiao، نويسنده , , N.J. Mauser، نويسنده , , Kai-Jun Mang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
95
To page
100
Abstract
Zero relaxation limit results of weak solutions of the initial-boundary value problem to the bipolar hydrodynamic model with the general pressure-density relation for semiconductors are established by the method of high energy estimates.
Keywords
Bipolar hydrodynamic model , Semiconductors , Zero relaxation limits
Journal title
Applied Mathematics Letters
Serial Year
2004
Journal title
Applied Mathematics Letters
Record number
897676
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