Potential fluctuations due to randomly distributed charges at the semiconductor–insulator interface in MIS-structures

A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor–insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential to which it leads in distinction with the so far known correlation functions leading to a divergent dispersion. The dispersion, an important characteristic of the random potential distribution, determining the amplitude of the potential fluctuations is calculated.