On the influence of noise in the evaluation of the electrical oscillations occurring in the α-Si/Si(p)/Si(n) device

The influence of additional noise on the electrical oscillations appearing in the NDR-region of the current controlled I–U characteristic of the α-Si/Si(p)/Si(n) device is studied. It is found that the corresponding attractor is significantly influenced only if this noise exceeds 10% of the initial noise-free signal. The corresponding correlation dimension ν shows a similar behaviour. The influence of the sampling rate of the corresponding time-series is also examined.