Oscillations in the α-Si/Si(p)/Si(n) device: embedding- and correlation dimensions

Electrical oscillations appear in the NDR-region of the current controlled I–U characteristic of the α-Si/Si(p)/Si(n) device. The corresponding attractor is characterized by its correlation- and minimum embedding dimension, ν and mmin, respectively. As the voltage UBE, applied in the Si(p)-region increases, mmin remains constant, equal to 2, and ν increases obtaining always non-integer values, lower than mmin.