Title of article :
Analysis high frequency of RF MEMS switches with electrostatic actuation
Author/Authors :
moloudian، Gholamhosein نويسنده , , Ebrahimi، Asghar نويسنده Biotechnology and Bioscience Department, Milano-Bicocca University, Milan, Italy , , Monsef ، Nemat allah نويسنده , , Aghajeri، Arman نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی 0 سال 2013
Pages :
6
From page :
3220
To page :
3225
Abstract :
ABSTRACT: High frequency switches wildly have applied in defense aerospace and wireless communication, radar systems application. For the purpose at a suitable RF switch for any kind of application at first should be consider required function features such as band width excited voltage and switching velocity . In this paper, we design and simulate RF MEMS switch in suspension bridge mode. We chose the transmission line of type CPW. First, by using TX LINE2003 software, we have designed and calculated the dimensions of transmission line for having characteristic impedance 50?. We have chosen the substrate made of silicon, conductor of transmission line of made of cooper, dielectric layer made of SiO2, and upper electrode (bridge) made of aluminum. We simulate the switch , in Hfss software and calculate the scatter parameters. High frequency analysis shows that the designed switch has low transmission loss and return loss , which endorses the switch performance.
Journal title :
International Research Journal of Applied and Basic Sciences
Serial Year :
2013
Journal title :
International Research Journal of Applied and Basic Sciences
Record number :
901345
Link To Document :
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