Author/Authors :
V.، Kumar, نويسنده , , G.C.، Giakos, نويسنده , , R.، Guntupalli, نويسنده , , J.A.، De Abreu-Garcia, نويسنده , , N.، Shah, نويسنده , , S.، Vedantham, نويسنده , , S.، Suryanarayanan, نويسنده , , S.، Chowdhury, نويسنده , , N.، Patnekar, نويسنده , , S.، Sumrain, نويسنده , , K.، Mehta, نويسنده , , E.، Evans, نويسنده , , A.، Orozco, نويسنده , , O.، Ugweje, نويسنده , , A.، Moholkar, نويسنده ,
Abstract :
The intrinsic sensitivity of cadmium zinc telluride (Cd/sub 1-x/Zn/sub x/Te) semiconductor detectors has been experimentally measured, within the X-ray diagnostic energy range. The results of this study indicate that the intrinsic efficiency of Cd/sub 1-x/Zn/sub x/Te can be increased by optimizing geometrical and physical detection parameters such as X-ray irradiation geometry, detector thickness, and applied electric field. These results indicate that Cd/sub 1-x/Zn/sub x/Te is a suitable candidate for digital imaging applications.
