Title of article :
CuInS2 based thin film photovoltaics
Author/Authors :
R. Scheer a، نويسنده , , *، نويسنده , , R. Klenk a، نويسنده , , J. Klaer a، نويسنده , , I. Luck b، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2004
Pages :
8
From page :
777
To page :
784
Abstract :
A fabrication process for CuInS2 thin film solar cells, based on sulfurization of Cu/In bilayers, is described. The process is investigated by in situ energy dispersive X-ray diffraction for phase identification as a function of process time. It is found that Raman spectroscopy is very convenient and reliable in assessing the quality of CuInS2 produced by this sequential process. Good quality CuInS2 films efficiently collect charge carriers generated by the incident sunlight. The solar-to-electric conversion efficiency limitations of state-of-the-art CuInS2 based devices are discussed using a comparison with device simulation. The module design is laid down and arguments for the up-scaling potential of this new type of solar cell are presented. 2004 Elsevier Ltd. All rights reserved.
Keywords :
quality assurance , Growth monitoring , CuInS2 , Solar cell , Thin film
Journal title :
Solar Energy
Serial Year :
2004
Journal title :
Solar Energy
Record number :
939401
Link To Document :
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