Author/Authors :
M. Benabdeslem a، نويسنده , , *، نويسنده , , L. Bechiri a، نويسنده , , N. Benslim a، نويسنده , , L. Mahdjoubi a، نويسنده , ,
E.B. Hannech a، نويسنده , , M. Zouiti a، نويسنده , , G. Nouet، نويسنده ,
Abstract :
Bulk and thin films of CuIn0.75Ga0.25Te2 have been grown using respectively the sealed quartz ampoule and the flash
evaporation techniques. X-ray diffraction results showed that the semiconductor has the chalcopyrite structure. The gaps
of the materials were determined from optical measurements and found to be 0.99 and 1.14 eV, respectively for bulk and
annealed films. Photoluminescence data showed a broad emission localised at 1.05 eV.
2005 Elsevier Ltd. All rights reserved
Keywords :
INGOT , Fusion , Lash evaporation , Chalcopyrite , film , defect , Photoluminescence
