Title of article :
SiNx deposited by in-line PECVD for multi-crystalline
silicon solar cells
Author/Authors :
M.C. Wei a، نويسنده , , S.J. Chang a، نويسنده , , *، نويسنده , , C.Y. Tsia b، نويسنده , , C.H. Liu، نويسنده , , S.C. Chen، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Abstract :
SiNx:H anti-reflective coating (ARC) layers were successfully grown by an in-line plasma enhanced chemical vapor
deposition (PECVD) system with an extremely high throughput. Film thickness and refractive index of the as-grown
samples were evaluated as functions of growth parameters, such as growth pressure, total gas flow rate, radio frequency
(RF) power and SiH4 to NH3 gas ratio. It was found that we could achieve high quality films with proper growth conditions
and proper post-deposition annealing.
2005 Elsevier Ltd. All rights reserved
Keywords :
SiNx:H , Anti-reflection coating , In-line PECVD , throughput
Journal title :
Solar Energy
Journal title :
Solar Energy
