Title of article :
The nature of mobile hydrogen in a-Si:H—Electrochemical studies
Author/Authors :
Katar?´na Gmucova´ a، نويسنده , , *، نويسنده , , Vojtech Na´daz?dy a، نويسنده , , Rudolf Durny´ b، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Pages :
7
From page :
694
To page :
700
Abstract :
Electrochemical studies of both the a-Si:H based metal/oxide/semiconductor structures and a-Si:H modified Pt electrode as a part of two-electrode cell compartment with electrolyte were performed to obtain information on the nature of mobile hydrogen in a-Si:H. We assume, that the complex formed by a hydrogen molecule and a silicon dangling bond (the origin of Dh states) provides for mobile hydrogen. Information on the process of electron selfexchange (hopping) in a-Si:H driven by diffusion in the presence of a concentration gradient of redox centers is obtained. The capability of the electrochemical methods for studying the role of hydrogen in degradation of a-Si:H caused by bias annealing and/or illumination is demonstrated. Also, it was shown that because of the unique electrocatalytic features of the a-Si:H modified Pt electrode, the latter can act as a ‘‘programmable’’ and selective sensor of heavy metal ions and/or metal complexes. 2006 Elsevier Ltd. All rights reserved
Keywords :
Gap states , Dangling bond , Hydrogen diffusion , a-Si:H , Semiconducting electrode , Redox centers
Journal title :
Solar Energy
Serial Year :
2006
Journal title :
Solar Energy
Record number :
939638
Link To Document :
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