Title of article :
The nature of mobile hydrogen in
a-Si:H—Electrochemical studies
Author/Authors :
Katar?´na Gmucova´ a، نويسنده , , *، نويسنده , , Vojtech Na´daz?dy a، نويسنده , , Rudolf Durny´ b، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Abstract :
Electrochemical studies of both the a-Si:H based metal/oxide/semiconductor structures and a-Si:H modified Pt electrode
as a part of two-electrode cell compartment with electrolyte were performed to obtain information on the nature
of mobile hydrogen in a-Si:H. We assume, that the complex formed by a hydrogen molecule and a silicon dangling bond
(the origin of Dh states) provides for mobile hydrogen. Information on the process of electron selfexchange (hopping) in
a-Si:H driven by diffusion in the presence of a concentration gradient of redox centers is obtained. The capability of the
electrochemical methods for studying the role of hydrogen in degradation of a-Si:H caused by bias annealing and/or
illumination is demonstrated. Also, it was shown that because of the unique electrocatalytic features of the a-Si:H modified
Pt electrode, the latter can act as a ‘‘programmable’’ and selective sensor of heavy metal ions and/or metal complexes.
2006 Elsevier Ltd. All rights reserved
Keywords :
Gap states , Dangling bond , Hydrogen diffusion , a-Si:H , Semiconducting electrode , Redox centers
Journal title :
Solar Energy
Journal title :
Solar Energy